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IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 42, NO. 7, JULY 1995. A New Constant-Field Scaling. Theory for MOSFET's. Jiin-Jang Maa, Student Member, IEEE, and ...
Direct Observation of Self-Heating in III?V Gate-All-Around ...IEEE Transactions on Electron Devices, 1969, 16, 108-113. 3.2. 106. 14. Charge control approach to the small signal theory of field-effect devices. IEEE ... Coherent transistor - Electron Devices, IEEE Transactions onIEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 42, NO. 9, SEPTEMBER 1995. Impact Ionization and Transport in the InAlAs/n+-InP HFET. David R. Greenberg, Student ... Modeling the Reverse Gate-Leakage Current in GaN-Channel HFETsIEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 40, NO. 11, NOVEMBER 1993. 0.31 volts respectively at 60 A/cm2, compared with 0.32 and 0.41 Volts for devices ...
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