Caractérisation électrique et fiabilité des transistors intégrant des ...
In this paper we review the state of the art in simulation of electron devices based on two-dimensional materials. We outline the main methods to model the ...
UCLA - eScholarship.orgIEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 42, NO. 7, JULY 1995. A New Constant-Field Scaling. Theory for MOSFET's. Jiin-Jang Maa, Student Member, IEEE, and ... Direct Observation of Self-Heating in III?V Gate-All-Around ...IEEE Transactions on Electron Devices, 1969, 16, 108-113. 3.2. 106. 14. Charge control approach to the small signal theory of field-effect devices. IEEE ... Coherent transistor - Electron Devices, IEEE Transactions onIEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 42, NO. 9, SEPTEMBER 1995. Impact Ionization and Transport in the InAlAs/n+-InP HFET. David R. Greenberg, Student ...
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