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Caractérisation électrique et fiabilité des transistors intégrant des ...
In this paper we review the state of the art in simulation of electron devices based on two-dimensional materials. We outline the main methods to model the ...
UCLA - eScholarship.org
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 42, NO. 7, JULY 1995. A New Constant-Field Scaling. Theory for MOSFET's. Jiin-Jang Maa, Student Member, IEEE, and ...
Direct Observation of Self-Heating in III?V Gate-All-Around ...
IEEE Transactions on Electron Devices, 1969, 16, 108-113. 3.2. 106. 14. Charge control approach to the small signal theory of field-effect devices. IEEE ...
Coherent transistor - Electron Devices, IEEE Transactions on
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 42, NO. 9, SEPTEMBER 1995. Impact Ionization and Transport in the InAlAs/n+-InP HFET. David R. Greenberg, Student ...
Modeling the Reverse Gate-Leakage Current in GaN-Channel HFETs
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 40, NO. 11, NOVEMBER 1993. 0.31 volts respectively at 60 A/cm2, compared with 0.32 and 0.41 Volts for devices ...
Modeling of electron devices based on two-dimensional materials
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 36. NO. 12. DECEMBER 1989. Delay Time Studies and Electron Mobility. Measurement in an a-Si : H TFT. Abstract-The ...
A new constant-field scaling theory for MOSFET's
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 71, NO. 10, OCTOBER 2024. 5925. Experimental Investigation of Drain Noise in. High Electron Mobility Transistors: ...