AOSP62530
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to.
SR46N06T5The test condition is VDD=25V, VGS=10V, IAS=24A, L=0.1mH. 3. The power dissipation is limited by 150oC junction temperature. 4. The data is theoretically ... PDB3012HX4HMMF50R280P is power MOSFET using Magnachip's advanced super junction technology that can realize very low on-resistance and gate charge. P3MNC6P3 B01 DC-01555 - novitronicThe data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Parameter. BVDSS. RDS(ON). VGS(th). IDSS. RM60N80D3IDM. A. IAS. A. EAS. mJ. TJ, TSTG. °C. Pulsed Drain Current (3). 1313. Continuous Drain. Current (2). TC = 25°C. ID. 328. TC = 100°C. 232. W. TC = 100°C. 167. 60V 1.2m? TOLL N-Ch Power MOSFETPeak Drain Current, Pulsed 1). IDM. 360. A. Avalanche Current. IAS. 29. A. Single Pulse Avalanche Energy 2). EAS. 210. mJ. Power Dissipation. Tc = 25?. Ptot. SG46N10T5... IAS=40A. 3. The power dissipation is limited by 150oC junction temperature. 4. The data is theoretically the same as ID and IDM, in real applications ... N1MNB002 20V N-Channel MOSFETsIDM Enterprise Specialized in Power Semiconductors ... IAS. 41.5. A. Single Pulse Avalanche Energy 2 ... td(on). 37 ns. Turn-On Rise Time at VGS = 10 V, VDS ... UNISONIC TECHNOLOGIES CO., LTD 2N65-TDThe UTC 2N65-TD is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate. GSFQ6904 - Good-Ark SemiconductorThe GSFQ6904 utilizes the latest techniques to achieve high cell density and low on-resistance. These features make this device extremely efficient and ... P5MNC5P5B 30V N-Channel MOSFETs - novitronic... IAS=42A, RG=25?, Starting TJ=25oC. 3. The data tested by pulsed , pulse width ? 300us , duty cycle ? 2%. 4. Essentially independent of operating ... MMD60R750P - Magnachip SemiconductorMMD60R750P is power MOSFET using Magnachip's advanced super junction technology that can realize very low on-resistance and gate charge. AON6154IDM. IAS. Avalanche energy L=0.3mH. C. EAS. VDS Spike. VSPIKE. TJ, TSTG. Symbol t ... tD(off). 56 ns tf. 5 ns. m?. VGS=10V, VDS=22.5V, ID=20A. Total Gate Charge.
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