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Extremely scaled high-k/In0.53Ga0.47As gate stacks with low ...
Industry-standard PEALD of TiN was carried out in a Cambridge Nanotech Fiji F202 system at 250?C us- ing a Tetrakis(dimethylamido)titanium(IV) (TDMAT).
Kinetics Study on the Initial Surface Growth of TiO2 Thin Film Layer ...
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Atomic Layer Deposition for Semiconductors | EPFL
The simplified model is then applied to reproduce experimental results from plasma enhanced ALD process for TiN deposition from. TDMAT and H2-N2 plasma ...