Si4966DY Dual N-Channel 2.5-V (G-S) MOSFET - Vishay

Si4966DY-T1-GE3 (Lead (Pb)-free and Halogen-free). N-Channel ... td(on). VDD = 10 V, RL = 10 ?. ID ? 1 A, VGEN = 4.5 V, Rg = 6 ?. 40. 60.







TLE4966-3K - Datasheet - Farnell
The TLE4966-3K is an integrated circuit dual Hall-effect sensor ... td. BOP. BRP. Page 12. Datasheet. 12. Rev.1.0, 2010-09-20. TLE4966-3K.
TLE4966L - Infineon Technologies
The TLE4966L is a high precision Hall-effect switch with direction detection, designed for accurate applications, with 2.7V to 24V operation and high ...
TLE4966K - Hall effect Switch - Infineon Technologies
The TLE4966K is a high precision Hall-effect switch with direction detection, designed for accurate applications, providing speed and direction ...



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MT4966