Patterning of the Oxide Mask for Nanowire Growth by Dry Etching
However, wet etching is an isotropie process, which means that its vertical and lateral etch rates are comparable. This results in an undercut of the etch mask, ...
Active Photonic Crystal Devices Based on InP/InGaAsP/InP Slab ...Undercut and cleaning steps. In order to ensure the mechanical degrees of freedom of the microdisk cavities, a final wet isotropic etching of the AlGaAs layer ... Self-aligned micro-optic integrated photonic platformThe cleaning also removed the spheres showing some amount of Ge undercut in the structure, implying that a GeOx was not preventing further etching from. cleaning technology in semiconductor device manufacturingThe vertical portion of the etch stops when the buried silicon oxide is reached, but lateral etching continues until the process is terminated (Figure 3.5(d)).
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