Modeling of electron devices based on two-dimensional materials
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 36. NO. 12. DECEMBER 1989. Delay Time Studies and Electron Mobility. Measurement in an a-Si : H TFT. Abstract-The ...
A new constant-field scaling theory for MOSFET'sIEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 71, NO. 10, OCTOBER 2024. 5925. Experimental Investigation of Drain Noise in. High Electron Mobility Transistors: ... Source to drain resistance beyond pinch-off in metal-oxide-semico ...IEEE Electron Device Letters (1980 - present). -. IEEE Trans. on Electron Devices (1954 - present). -. IEEE International Electron Devices Meeting (1955 - ... High voltage implanted RESURF p-LDMOS using BiCMOS technologyIEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 71, NO. 9, SEPTEMBER 2024. Impact of Process Sequence and Device. Architecture on Mechanical ...
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