Ge virtual substrates for high efficiency III-V solar cells
The Ge/InGaAs/AlInGaAs/AlInGaP 4J-UMM cell designed for space applications (4G32C) was used as a basis for the development of the 5-junction UMM ...
New approaches to InGaN solar cells - Université de LorraineGaInP [22] provides a good match, and has been used to generate a 29.8% efficient dual-junction solar cell with a silicon bottom cell [17], ... GaAs/GaInP nanowire solar cell on Si with state-of-the-art V ... - HALProblem. ? To generate ground irradiation data necessary to predict the effect of a particle spectrum (as that found in space) on a solar cell in orbit. Space Solar Cell Radiation Damage Modelling - SPENVIS... solar cells, with InGaP cells being less sensitive to the presence of dislocations than GaAs cells due to a reduced disparity in carrier mobilties for InGaP.
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