Development of AIGaN/GaN HBTs and HFETs for High Power and ...

Abstract? We investigate a mechanism for greatly improving switching speed in contact-controlled thin-film transistors (TFTs), which have ...







GaN HBT: toward an RF device - ece.ucsb.edu
IEEE Transactions on Electron Devices 69,. 1945-1949 (2022). Page 29. 103 Wong, M. H., Sasaki, K., Kuramata, A., Yamakoshi, S. & Higashiwaki, M. Field-plated.
Low-Frequency Noise in InGaAs-OI Transistors
IEEE Transactions on Electron Devices, 2022, https://doi.org/10.1109/TED.2021.3136150. [3] A. G. Viey et al. IEEE Transactions on Electron ...
4E Power Electronic Conversion Technology Annex (PECTA)
in MOS Devices,? IEEE Transactions on Electron Devices, vol. 46, no. 2, pp. 383?387, 1999. 21, 22. [7] J. Sune, P. Olivo, and B. Ricco., ?Quantum-Mechanical ...



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Total Dose Effects in Electronic Devices and Circuits - Agenda INFN