CONTRIBUTION A L'IDENTIFICATION DE NOUVEAUX ...
Devant la commission d'examen formée de : M. ALLARD, Bruno. Professeur, INSA de Lyon. M. AZZOPARDI, Stéphane.
2MBI1800XXG120P-50C o lle c to. r c u rre n t: I C. [A. ] V CC = 600V, R G (on/off)= 0.56/0.56 ?,. Reverse bias safe operating area (max.) V GE = S w itc h in g tim e. [n s e c. ]. DIM1800H1HS17-PH500 - Dynex SemiconductorThe DIM1800H1HS17-PH500 is a Half Bridge 1700V, trench gate, insulated gate bipolar transistor (IGBT) module with enhanced field stop and ... DIM3600ESM17-PT500 - Semic TradeThe DIM3600ESM17-PT500 is a single switch 1700V, trench gate, insulated gate bipolar transistor (IGBT) module with enhanced field stop and ...
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