60V 1.2m? TOLL N-Ch Power MOSFET

Peak Drain Current, Pulsed 1). IDM. 360. A. Avalanche Current. IAS. 29. A. Single Pulse Avalanche Energy 2). EAS. 210. mJ. Power Dissipation. Tc = 25?. Ptot.







SG46N10T5
... IAS=40A. 3. The power dissipation is limited by 150oC junction temperature. 4. The data is theoretically the same as ID and IDM, in real applications ...
N1MNB002 20V N-Channel MOSFETs
IDM Enterprise Specialized in Power Semiconductors ... IAS. 41.5. A. Single Pulse Avalanche Energy 2 ... td(on). 37 ns. Turn-On Rise Time at VGS = 10 V, VDS ...
UNISONIC TECHNOLOGIES CO., LTD 2N65-TD
The UTC 2N65-TD is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate.



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RM60N80D3